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TOS7210S絕緣電(dian)阻(zu)測(ce)試儀產品概述

PID絕緣測(ce)(ce)試(shi)儀(yi)（TOS7210S）是為準確有效地對太陽能電池(chi)模(mo)塊的PID(Potential Induced Degradation)現(xian)象進行評估，以絕緣電阻測(ce)(ce)試(shi)儀(yi)（TOS7200）為基礎設計而成(cheng)的測(ce)(ce)試(shi)儀(yi)。 
附有極性切換功能，輸(shu)出電(dian)壓可(ke)(ke)(ke)達2000V,同時(shi)裝載了n*分辨(bian)率的電(dian)流表，因此(ci)不僅可(ke)(ke)(ke)以進行PID評估，還可(ke)(ke)(ke)以用(yong)于要(yao)求進行高敏感(gan)度測試(shi)的絕(jue)緣體評估測試(shi)。標(biao)準安裝了可(ke)(ke)(ke)從外部調(diao)用(yong)的面(mian)板(ban)存儲器(qi)及RS232C接(jie)口，因此(ci)也可(ke)(ke)(ke)以靈活(huo)對應自動化系(xi)統(tong)。
什么是PID現象(xiang)？
PID現(xian)(xian)象是(shi)指(zhi)太(tai)陽能(neng)(neng)電(dian)(dian)(dian)池與邊框長期被施(shi)以(yi)(yi)高(gao)(gao)電(dian)(dian)(dian)壓(ya)，電(dian)(dian)(dian)池發(fa)(fa)(fa)電(dian)(dian)(dian)量顯著降(jiang)低的(de)(de)(de)(de)現(xian)(xian)象。目前認為(wei)所(suo)施(shi)加(jia)的(de)(de)(de)(de)電(dian)(dian)(dian)壓(ya)越(yue)高(gao)(gao)，越(yue)是(shi)在(zai)高(gao)(gao)溫、高(gao)(gao)濕的(de)(de)(de)(de)環境下(xia)劣化現(xian)(xian)象越(yue)嚴重。如晶(jing)體硅(gui)太(tai)陽能(neng)(neng)電(dian)(dian)(dian)池模(mo)塊的(de)(de)(de)(de)輸(shu)出電(dian)(dian)(dian)壓(ya)即使(shi)只有數(shu)十V，一旦直接(jie)(jie)連接(jie)(jie)的(de)(de)(de)(de)片數(shu)增(zeng)加(jia)，串(chuan)內(nei)的(de)(de)(de)(de)電(dian)(dian)(dian)位差將變得非常(chang)高(gao)(gao)。一方(fang)面，PCS（Power Conditioning System）作為(wei)交流電(dian)(dian)(dian)源與系(xi)統(tong)相連,使(shi)接(jie)(jie)地形(xing)態發(fa)(fa)(fa)生(sheng)變化。輸(shu)入端采(cai)用(yong)浮接(jie)(jie)（一側電(dian)(dian)(dian)極不(bu)能(neng)(neng)接(jie)(jie)地線(xian)(xian)）的(de)(de)(de)(de)無變壓(ya)器方(fang)式近年有所(suo)增(zeng)加(jia)。這種情(qing)況下(xia)電(dian)(dian)(dian)池和地線(xian)(xian)間將發(fa)(fa)(fa)生(sheng)高(gao)(gao)電(dian)(dian)(dian)位差。現(xian)(xian)在(zai)可(ke)明確的(de)(de)(de)(de)是(shi)，晶(jing)體硅(gui)太(tai)陽能(neng)(neng)電(dian)(dian)(dian)池模(mo)塊中(zhong)，相對(dui)于邊框（接(jie)(jie)地線(xian)(xian)）負極電(dian)(dian)(dian)位高(gao)(gao)的(de)(de)(de)(de)電(dian)(dian)(dian)池容易發(fa)(fa)(fa)生(sheng)PID現(xian)(xian)象。（請參照圖(tu)1）目前，日本(ben)國內(nei)以(yi)(yi)最大(da)600V、歐洲以(yi)(yi)最大(da)1000V的(de)(de)(de)(de)系(xi)統(tong)電(dian)(dian)(dian)壓(ya)運(yun)行太(tai)陽能(neng)(neng)電(dian)(dian)(dian)池模(mo)塊，但是(shi)目前出現(xian)(xian)了(le)提(ti)高(gao)(gao)最大(da)系(xi)統(tong)電(dian)(dian)(dian)壓(ya)以(yi)(yi)削減企業用(yong)大(da)規(gui)模(mo)太(tai)陽能(neng)(neng)發(fa)(fa)(fa)電(dian)(dian)(dian)系(xi)統(tong)的(de)(de)(de)(de)串(chuan)數(shu)、PCS總數(shu)，提(ti)高(gao)(gao)發(fa)(fa)(fa)電(dian)(dian)(dian)效率的(de)(de)(de)(de)趨勢(shi)。 
圖2模(mo)(mo)擬(ni)了(le)晶(jing)體硅太陽能電(dian)(dian)(dian)(dian)(dian)池模(mo)(mo)塊(kuai)的(de)處于高電(dian)(dian)(dian)(dian)(dian)位(wei)差的(de)狀況。邊(bian)框為正(zheng)極電(dian)(dian)(dian)(dian)(dian)位(wei)、模(mo)(mo)塊(kuai)電(dian)(dian)(dian)(dian)(dian)路處于負*電(dian)(dian)(dian)(dian)(dian)位(wei)的(de)狀況。目前認為是由于超白鋼化玻璃內(nei)的(de)鈉離子向電(dian)(dian)(dian)(dian)(dian)池側遷(qian)移而引起劣化。（薄膜太陽能電(dian)(dian)(dian)(dian)(dian)池模(mo)(mo)塊(kuai)也被確認出現(xian)(xian)(xian)PID現(xian)(xian)(xian)象，但是發生(sheng)劣化的(de)機制與晶(jing)體硅太陽能電(dian)(dian)(dian)(dian)(dian)池模(mo)(mo)塊(kuai)不同。）現(xian)(xian)(xian)在，各(ge)種研究(jiu)機構正(zheng)在通過研究(jiu)、試驗查(cha)找(zhao)PID現(xian)(xian)(xian)象的(de)原(yuan)因。

TOS7210S絕緣電阻(zu)測試儀產品(pin)特點

可任意設(she)定輸出電壓(ya)
可(ke)將對被檢品施(shi)加(jia)的(de)測試電(dian)(dian)壓設(she)定在50Vdc-2000Vdc（分辨率1V）范(fan)(fan)圍(wei)內。假設(she)太陽能發電(dian)(dian)系統的(de)電(dian)(dian)壓在1000V以(yi)上，可(ke)對其進行(xing)評估。此外(wai)，在電(dian)(dian)氣(qi)/電(dian)(dian)子(zi)部件、電(dian)(dian)氣(qi)/電(dian)(dian)子(zi)設(she)備(bei)的(de)絕緣電(dian)(dian)阻測試中，也(ye)可(ke)對應(ying)JIS C 1302: 1994所規(gui)定的(de)電(dian)(dian)壓范(fan)(fan)圍(wei)以(yi)外(wai)的(de)測試。在50V-1000V范(fan)(fan)圍(wei)內，輸出特性以(yi)JIS C 1302: 1994為基準。 

極(ji)性(xing)切換功能
可(ke)通過主機(ji)面板的開關輕松切換輸出極(ji)(ji)性。PID現象是(shi)一種可(ke)逆現象，施加負(fu)偏(pian)壓電(dian)壓可(ke)能會(hui)恢復(fu)。極(ji)(ji)性切換是(shi)一項不(bu)需要(yao)對被檢品實施配(pei)線變(bian)更的便利功能。此(ci)外，通過RS232C接口可(ke)實施由外部控制的切換。 

建立輸出(chu)端的浮地(di)
輸(shu)出(chu)端子(zi)與接地電(dian)位(wei)間(jian)(jian)為浮地狀態(*1)。此外(wai)，使用屏蔽(bi)電(dian)纜(lan)作為輸(shu)出(chu)電(dian)纜(lan) (TL51-TOS)。這樣就不會測(ce)(ce)(ce)量(liang)(liang)被檢品與大地間(jian)(jian)的電(dian)流，只測(ce)(ce)(ce)量(liang)(liang)測(ce)(ce)(ce)試點間(jian)(jian)的電(dian)流，可確保評估測(ce)(ce)(ce)試的高(gao)敏(min)感度和精確性。
*1：設定為正極的(de)端子(zi)的(de)對地電壓（±1000Vdc）設定為負極的(de)端子(zi)的(de)對地電壓（+1000Vdc及-3000Vdc） 

模擬輸出端子(zi)
在(zai)電(dian)(dian)阻顯(xian)示模式(shi)中，基于對(dui)(dui)(dui)數壓縮將對(dui)(dui)(dui)應(ying)電(dian)(dian)阻測(ce)量(liang)值的電(dian)(dian)壓輸(shu)出(chu)限制在(zai)0V-4V之間。在(zai)電(dian)(dian)流顯(xian)示模式(shi)中，對(dui)(dui)(dui)應(ying)電(dian)(dian)流測(ce)量(liang)值及測(ce)量(liang)量(liang)程（4個量(liang)程）按線性標度輸(shu)出(chu)。使用(yong)數據記(ji)錄器等外部(bu)記(ji)錄設備可對(dui)(dui)(dui)被(bei)檢品(pin)的變化(hua)(hua)、劣化(hua)(hua)狀況進行解析。

TOS7210S絕緣(yuan)電阻測試儀選型指南(nan)